Electrical conduction properties of Si δ-doped GaAs grown by MBE
نویسندگان
چکیده
منابع مشابه
Electrical activation and electrical properties of arsenic doped Hg1.CdTe epilayers grown by MBE
The annealing and electrical properties of extrinsic in situ doped mercury cadmium telluride (Hg1.CdTe) epilayers grown by molecular beam epitaxy (MBE) on (211)B CdTe/Si and CdZnTe substrates are studied. The doping is performed with an elemental arsenic source. HgCdTe epilayers of CdTe mole fraction in the range of midwavelength infrared (MWIR) are grown at substrate temperatures of 175-185°C....
متن کاملElectrical and structural properties of Be- and Si-doped low-temperature-grown GaAs
Excess As is incorporated in GaAs grown at low substrate temperatures by molecular beam epitaxy. Excess As is distributed in the epilayer as defects and the material exhibits considerable strain. When annealed to moderate temperatures, the strain is seen to disappear and the excess As is now in the form of semimetallic clusters. It has been proposed that these As clusters form buried Schottky b...
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The in f luence o f d imer ic (As2) vs te t ramer ic (As4) arsenic vapour spec i e s on the e l e c t r i c a l and o p t i c a l p roper t ies o f undoped and of Ge-doped GaAs grown by molecular beam ep i taxy (MBE) has been studied by using H a l l e f f e c t , photoluminescence (PL) and DLTS measurements. The arsenic molecular beam was obtained from separate As2 and AS+ sources, resp., and ...
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The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the p...
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The III-bismides are considered to be a very attractive set of III-V alloys due to their potential applications in photonic and spintronic devices. The incorporation of bismuth into GaAs, with its band anti-crossing effect in the valence band of GaAs, leads to a decrease in the temperature dependence of the bandgap. Such a material may be very useful in designing temperature-insensitive semicon...
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ژورنال
عنوان ژورنال: Physica B: Condensed Matter
سال: 2009
ISSN: 0921-4526
DOI: 10.1016/j.physb.2009.07.190